Assistant Professor

M.Sc., Ph.D. (Massachusetts Institute of Technology)

Xia Research Group website: http://mtrl-xia.sites.olt.ubc.ca/

phone: 6048220478
fax: 6048223619
Office: Frank Forward Room 213
Lab: Frank Forward Room 205
Research Interests

Group IV semiconductors in microelectronics

To further advance the performance of microelectronic devices such as CMOS and HBTs, group IV elements and alloys such as germanium (Ge), SiGe and SiGe:C are integrated into silicon platforms to boost performance by stress, bandgap and defect engineering. The integration of these new materials, especially with the increasing Ge, C fractions and the resulting stresses, introduces new process phenomena and fabrication challenges such as dopant diffusion and segregation, Si-Ge interdiffusion, stress-diffusion interaction etc. We investigate these new phenomena experimentally, catch them in mathematical models and implement in TCAD simulation tools to assist industry in structure and fabrication design of these devices.

Si compatible lasers

Si compatible lasers are in great demand for applications in on-chip optical interconnects to increase Integrated Circuits (ICs) speed and in optical communications to lower the manufacturing cost. Early Ge laser demonstrations had quite low performance. We model Ge laser diode to study the methods of improving Ge laser performance such as stress engineering and predict the performance potential. Besides work on Ge lasers, we also investigate the monolithic integration of compound semiconductor lasers on Ge/Si substrates.

2D semiconductors

2D semiconductors are suitable for thin, quasi-transparent and flexible electronics and photonics. Black phosphorus was successfully isolated in 2013 and was shown to have unique properties such as direct and tunable bandgap from 0.3 to 2 eV, suitable for applications in thermal imaging, photovoltaics and telecomm. We investigate the fabrication and properties of single to few-layer black phosphorus and MoS2.

3D integration of ICs

Through-silicon-via (TSV) is a key element for 3-D integration in providing vertical interconnects for chip-stacking structures. Thermal-mechanical stress originating from the thermal expansion coefficient mismatch of Cu and Si can cause uniformity and reliability issues. We study the stress distribution around Cu-filled and carbon-nanotubes-filled TSVs, its influencing factors and the impact on carrier mobility and keep-out zone (KOZ) for logic devices near the TSVs, which is important for the design and reliability of 3D integrated circuits.

Raman spectroscopy

Micro-Raman spectroscopy is a powerful tool in studying chemical concentration, stress, crystallinity, crystal orientation, chemical bonding, and temperature. We have the capability of doing in-situ Raman during thermal treatment. The material systems we are  interested in include SiGe:C alloys, Ge nanowires, InGaAs/GaAs, carbon nanotubes, graphene, nanocrystalline Si, black phosphorus, MoS2, FinFETs, Ti oxide and soils.

Research Collaborations

  • Academic collaborators:

Prof. Tom Troczynski (UBC),  Prof. Rizhi Wang (UBC), Prof. Lukas Chrostowski (UBC), Prof. Nick Jaeger (UBC), Prof. Josh Folk (UBC), Prof. Peyman Servati (UBC), Prof. Stephen O’leary (UBC), Dr. Mario Beaudoin (UBC), Prof. Chuan Seng Tan (Nanyang Technological University, Singapore), Prof. Wenjuan Zhu (UIUC), Prof. Judy Hoyt (MIT), Prof. Pat Mooney (Simon Fraser University), Prof. Ting-Chang Chang (National Sun Yat-Sen University, Taiwan), Dr. Dalaver Anjum (KAUST, Saudi), Prof. Feng Zhao (Washington State University).

  • Industry collaborators:

Drs. Simon Li, Leo Li, and Fred Fu (Crosslight Software Inc., Canada); Dr. Dylan McGuire (Lumerial Solutions Inc., Canada); Dr. Stanley Philips and Hiroshi Yasuda (Analog Technology, Texas Instruments); Dr. Dave Camm and Steve McCoy (Mattson Technologies Canada); Drs. Jim Fiorenza, Jizhong Li, Ji-Soo Park, and Jennifer Hydrick (Amberwave Systems, USA).

People

  • Current Students:

        Yunlong Zhao (Ph.D.),

        Weijun Luo (M.A. Sc.),

        Guangnan Zhou (M.A. Sc.),

        Jiaxin Ke (M.A. Sc.),

        Miayan Yermi (Ph.D., co-supervised with Prof. Dana Grecov, UBC Mechanical Engineering).

  • Alumni/Alumnae:

        Dr. Xiyue Li, (Lecturer, Institute of Information Technologies, Guangdong University of Technology),

        Dr. Yiheng Lin,

        Dr. Yuanwei Dong (Intel, Hillsboro OR, USA),

        Ye Zhu (Nanyang Technological University, Singapore),

        Tania Tasmin (Lecturer, Department Electrical & Computer Engineering, King Abdulaziz University, Saudi Arabia),

        Feiyang Cai (Istuary Innovation Group, Vancouver BC, Canada),

        Qian Song (Nanjing University).

 

  • Visiting scholars:

        2009-2010: Prof. Ting-Chang Chang (National Sun Yat-sen University),

        2011: Prof. Kuan-Neng Chen (National Chiao Tung University).

 

 

 

Recent work under review or in preparation for submission:

1. Study of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy with 442 nm Excitation

Authors: Weijun Luo, Qian Song, Guangnan Zhou, David Tuschel, and Guangrui (Maggie) Xia

 

Refereed Journal Papers

  1.  Weijun Luo, Rui Yang, Jialun Liu, Yunlong Zhao, Wenjuan Zhu, and Guangrui (Maggie) Xia,Thermal Sublimation: a Scalable and Controllable Thinning Method for the Fabrication of Few-Layer Black Phosphorus“, accepted by Nanotechnology in June 2017, in press.
  2. Jiaxin Ke, Lukas Chrostowski and Guangrui (Maggie) Xia, “Stress engineering with silicon nitride stressors for Ge-on-Si lasers“,   IEEE Journal of Photonics, vol. 9, 2017, pp. 0-14.
  3. Yiheng Lin, Wei Shi, Jizhong Li, Ting-Chang Chang, Ji-Soo Park, Jennifer Hydrick, Zigang Duan, Mark Greenberg, James G. Fiorenza, Lukas Chrostowski and Guangrui (Maggie) Xia, Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping“, Optical Materials Express, vol. 7, 2017, pp. 726-733.
  4. Colton Wells, Jheng-Yi Jiang, Ting-Fu Chang, Chih-Fang Huang, Jiaxin Ke, Weijun Luo, Guangrui Xia, Kuan Yew Cheong, and Feng Zhao, “Stress and thermal characterization of 4H-SiC microelectromechanical structures“, Materials Letters, vol. 191, 2017, pp. 196–199.
  5. Feiyang Cai, Dalaver H. Anjum, Xixiang Zhang and Guangrui (Maggie) Xia, “Study of Si-Ge Interdiffusion with Phosphorus Doping“, Journal of Applied Physics, vol. 120, 2016, p. 165108 (10 pages).
  6. Xiyue Li, Zhiqiang Li, Simon Li, Lukas Chrostowski and Guangrui (Maggie) Xia, “Design Considerations of Biaxially Tensile-Strained Germanium-on-Silicon Lasers“, Semiconductor Science and Technology, vol. 31, 2016, p. 065015.
  7. Ye Zhu, Kaushik Ghosh, Hong Yu Li, Yiheng Lin, Chuan Seng Tan, Guangrui (Maggie) Xia, “On the Origins of Near-Surface Stresses in Silicon around Cu-filled and CNT-filled Through Silicon Vias“, Semiconductor Science and Technology, vol. 31, 2016, p. 055008.
  8. S. Arash Sheikholeslam, Weijun Luo, Cristian Grecu, Guangrui (Maggie) Xia and André Ivanov, “Hydrogen diffusion in amorphous ZrO2”, Journal of Non-crystalline Solids, vol. 440, May 2016, pp. 7–11.
  9. Hung Nguyen, Chih-Fang Huang, Weijun Luo, Guangrui (Maggie) Xia, Zhiqiang Chen, Zhiqiang Li, Christopher Raymond, David Doyle, Feng Zhao, “Synthesis of Large-Scale 2-D MoS2 Atomic Layers by Hydrogen-free and Promoter-free Chemical Vapor Deposition”, Materials Letters, vol. 168, April 2016, pp. 1-4.
  10. Yiheng Lin, Hiroshi Yasuda, Manfred Schiekofer and Guangrui (Maggie) Xia, “The Effects of Thermal Nitridation on Phosphorus Diffusion in Strained SiGe and SiGe:C“, Journal of Materials Science, vol. 51, Feb. 2016, pp. 1532-1540.
  11. S. Arash Sheikholeslam, Guangrui (Maggie) Xia, Cristian Grecu, Andre Ivanov, “Generation and properties of bulk α-ZrO2 by molecular dynamics simulations with a reactive force field”, Thin Solid Films, vol. 594, Nov. 2015, pp. 172–177.
  12. Feiyang Cai,Yuanwei Dong, Yew Heng Tan, Chuan Seng Tan and Guangrui (Maggie) Xia,“Enhanced Ge-Si Interdiffusion in High Phosphorus-Doped Germanium on Silicon”, Semiconductor Science and Technology, vol. 30, 2015, p. 105008.
  13. Yiheng Lin, Hiroshi Yasuda, Manfred Schiekofer and Guangrui (Maggie) Xia, “Coupled Dopant Diffusion and Segregation in Inhomogeneous SiGe Alloys: Experiments and Modeling”, J. Appl. Phys., vol. 117, 2015, pp. 214901-1 to 214901-7.
  14. Ye Zhu, Jiye Zhang, Hong Yu Li, Chuan Seng Tan and Guangrui (Maggie) Xia,”Study of Near-surface Stresses in Silicon around Through Silicon Vias at Elevated Temperatures by Raman spectroscopy and Simulations”, IEEE Transactions on Device and Material Reliability, vol. 15, 2015, pp.142-148.
  15. Yiheng Lin, Hiroshi Yasuda, Manfred Schiekofer, Bernhard Benna, Rick Wise and Guangrui (Maggie) Xia, “Effects of Carbon on Phosphorus Diffusion in SiGe:C and the Implications on Phosphorus Diffusion Mechanisms”, J. Appl. Phys, vol. 116, 2014, pp.144904-1 to 144904-9.
  16. Yuanwei Dong, Patricia M Mooney, Feiyang Cai, Dalaver Anjum, Naeem Ur-Rehman, Xixiang Zhang and Guangrui (Maggie) Xia, “Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures”, ECS Journal of Solid State Science and Technology, vol.3, 2014, p.302-p.309.
  17. K. J. Schmidt, Y. Lin, M. Beaudoin, G. Xia, S. K. O’Leary, G. Yue, and B. Yan, “The mean crystallite size within a hydrogenated nanocrystalline silicon based photovoltaic solar cell and its role in determining the corresponding crystalline volume fraction”, Canadian Journal of Physics, vol. 92, 2014.
  18. Yuanwei Dong, Winston Chern, Patricia M Mooney, Judy L Hoyt and Guangrui (Maggie) Xia, “On the role and modeling of compressive strain in Si-Ge interdiffusion for SiGe heterostructures”, Semiconductor Science and Technology, vol. 29, 2014, pp. 015012
  19. Kaushik Ghosh, Jiye Zhang, Lin Zhang, Yuanwei Dong, Hongyu Li, Cher Ming Tan, Guangrui Xia, and Chuan Seng Tan, “Integration of Low-Dielectric Liner in Through Silicon Via and Thermomechanical Stress Relief”, Applied Physics Express vol. 5, 2012, pp. 126601-1 to 126601-3.
  20. Yuanwei Dong, Yiheng Lin, Simon Li, Steve McCoy, and Guangrui (Maggie) Xia, “A unified interdiffusivity model and model verification for tensile and relaxed SiGe interdiffusion over the full germanium content range”, J. Appl. Phys. Vol. 111, 2012, pp. 044909-1 to 044909-9
  21. Chih-Hao Dai,Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Szu-Han Ho, Tien-Yu Hsieh,Wen-Hung Lo, Ching-En Chen, Jou-Miao Shih, Wan-Lin Chung, Bai-Shan Dai, Hua-Mao Chen, Guangrui Xia, Osbert Cheng, and Cheng Tung Huang, “Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors”, Applied Physics Letters, vol. 99, 2011, pp. 012106-1 to 012106-3.
  22. Chih-Hao Dai, Ting-Chang Chang, An-Kuo Chu, Yuan-Jui Kuo, Fu-Yen Jian, Wen-Hung Lo, Szu-Han Ho, Ching-En Chen, Wan-Lin Chung, Jou-Miao Shih, Guangrui Xia, Osbert Cheng, and Cheng-Tung Huang, “On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs”, IEEE Electron Device Letters, vol. 32, No. 7, 2011, pp. 847-849.
  23. Chih-Hao Dai,Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Wen-Hung Lo, Szu-Han Ho, Ching-En Chen, Jou-Miao Shih, Hua-Mao Chen, Bai-Shan Dai, Guangrui Xia, Osbert Cheng, and Cheng Tung Huang, “Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors”, Applied Physics Letters, vol. 98, 2011, pp. 092112-1 to 092112-3.
  24. Chih-Hao Dai, Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Shih-Ching Chen, Chih-Tsung Tsai, Wen-Hung Lo, Szu-Han Ho, Guangrui Xia, Osbert Cheng, Cheng Tung Huang, “Enhanced gate-induced foating-body effect in PD SOI MOSFET under external mechanical strain”, Surface & Coatings Technology, vol. 205, 2010, pp. 1470-1474.
  25. Chih-Hao Dai, Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Shih-Ching Chen, Chih-Chung Tsai, Szu-Han Ho, Wen-Hung Lo, Guangrui Xia, Cheng, Osbert Cheng and Cheng Tung Huang, “On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs”, IEEE Electron Device Letters, vol. 31, 2010, pp. 540-542.
  26. Guangrui Xia and Judy L. Hoyt, “Si-Ge Interdiffusion under Oxidizing Conditions in Epitaxial SiGe Heterostructures with High Compressive Stress,” Applied Physics Letters, vol. 96, 2010, pp. 122107-1 to 122107-3.
  27. Guangrui Xia, Michael Canonico, and Judy L. Hoyt, “Si-Ge interdiffusion in epitaxial SiGe heterostructures and its impacts on technology,” Journal of Applied Physics, vol.101, 2007, pp. 044901-1 to 044901-11.
  28. Guangrui Xia, Michael Canonico, and Judy L. Hoyt, “Interdiffusion in strained Si/Strained SiGe epitaxial heterostructures,” Semiconductor Science and Technology, vol.22, 2006, S55–S58
  29. Guangrui Xia, Michael Canonico, O. O. Olubuyide and Judy L. Hoyt, “Strain dependence of Si-Ge interdiffusion in epitaxial Si/Si1-yGey/Si heterostructures on relaxed Si1-xGex substrates,” Applied Physics Letters, vol. 88, 2006, pp. 013507-1 to 013507-3.
  30. J. Li, D. Anjum, R. Hull, Guangrui Xia and J. L. Hoyt, “Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging,” Applied Physics Letters, vol. 87, no. 22, 2005, pp. 222111-1 to 222111-3.
  31. Guangrui Xia, H. M. Nayfeh, M. L. Lee, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li, R. Hull, N. Klymko, and J. L. Hoyt, “Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs,” IEEE Transactions on Electron Devices, vol. 51, no. 12, December 2004, pp. 2136-2144.
  32. F. Z. Cui, Z. J. Chen, J. Ma, Guangrui Xia, Y. Zhai, “Atomistic simulation of radiation damage to carbon nanotube,” Physics Letters A, vol. 295, no. 1, March 11, 2002, pp. 55-59.
  33. M.L. Swiggers, Guangrui Xia, J.D. Slinker, A.A. Gorodetsky, G.G. Malliaras, R.L. Headrick, Brian T. Weslowski, R.N. Shashidhar and C.S. Dulcey, “Orientation of pentacene films using surface alignment layers and its influence on thin-film transistor characteristics,” Applied Physics Letters, vol. 79, no. 9, August 27, 2001, pp. 1300.
  34. Fuzhai Cui, Guangrui Xia and An Chen, “Atomistic simulation of radiation damage to carbon nanotubes,” Progress in Natural Science, vol. 10, no. 3, 2000, pp. 278-281.

Conference Papers/Presentations

  1. Weijun Luo, Qian Song, Guangnan Zhou, David Tuschel, Guangrui Xia, “Study of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy with 442 nm Excitation”,  oral presentation accepted by 18th Canadian Semiconductor Science and Technology Conference, Sep. 2017.
  2. Guangrui (Maggie) Xia, “Dopant diffusion and segregation, Si-Ge interdiffusion and defect engineering in SiGe devices”, invited presentation at 47th European Solid-State Device Research Conference (ESSDERC), Sep. 2017.
  3. Weijun Luo, Rui Yang, Jialun Liu, Wenjuan Zhu, Guangrui (Maggie) Xia, “Thermal Sublimation as a Scalable and Controllable Thinning Method for the Fabrication of Few-Layer Black Phosphorus”, Materials Research Society 2016 Fall Meeting, Boston, MA, USA, Nov. 27 – Dec. 2, 2016.
  4. Jiaxin Ke, Zhiqiang (Leo) Li, Simon Li, Guangrui (Maggie) Xia, “Stress and structure optimizations with side silicon nitride stressors for Ge-on-Si lasers”, Advanced Photonics Congress, Vancouver, BC, July 2016
  5. Xiyue Li, Zhiqiang Li, Simon Li, Bin Li, Guangrui Xia, “Temperature Characteristics of Tensile-Strained Ge-on-Si Lasers”, International SiGe Technology and Device Meeting 2016, Nagoya, Japan, June 2016
  6. Feiyang Cai, Dalaver H. Anjum, Xixiang Zhang, Guangrui (Maggie) Xia, “Experiments and Quantitative Modeling of Si-Ge Interdiffusion with High Phosphorus Doping”, accepted for presentation at International SiGe Technology and Device Meeting 2016, Nagoya, Japan, June 2016
  7. Guangrui Xia, “Ge lasers: performance, potential and roadmap”, invited talk at Photonics North 2016 Conference, Qubec City, QC, May 24-26, 2016.
  8. Xiyue Li, Zhiqiang Li, Simon Li, Lukas Chrostowski, and Guangrui (Maggie) Xia, “Design Optimizations of Biaxially Tensile-Strained Germanium-on-Silicon Lasers”, 17th Canadian Semiconductor Science and Technology Conference, Sherbrook, Canada, August 2015
  9. Ye Zhu, Kaushik Ghosh, Hong Yu Li, Yiheng Lin, Yingbin Qiu, Gao Sheng, Feiyang Cai, Chuan Seng Tan and Guangrui (Maggie) Xia, “On the Origins of Near-Surface Stresses in Silicon around Cu-filled and CNT-filled Through Silicon Vias”, 17th Canadian Semiconductor Science and Technology Conference, Sherbrook, Canada, August 2015
  10. Feiyang Cai, Simon Li, Fred Fu and Guangrui Xia, “Modeling of Reverse Gate Leakage Current for AlGaN/GaN HEMTs”, Conference on Electron Devices and Solid-State Circuits (EDSSC), June 2015, Singapore.
  11. Yiheng Lin, Hiroshi Yasuda, Manfred Schiekofer, Bernhard Benna and Guangrui Xia,“Effect of Thermal Nitridation on Phosphorus Diffusion in SiGe and SiGe:C and Its Implication on Diffusion Mechanism”, 7th International Silicon-Germanium Technology and Device Meeting, June 2014, Singapore.
  12. J. Zhang, L. Zhang, Y. Dong, H.Y. Li, C. M. Tan, G. Xia, and C. S. Tan, “The dependency of TSV keep-out zone (KOZ) on Si crystal direction and liner material,” IEEE International 3D System Integration Conference (3DIC), San Francisco, October 2013.
  13. Guanguri Xia “Interdiffusion and dopant diffusion in SiGe and SiGe:C systems”, 16th Canadian Semiconductor Science and Technology Conference, Thunderbay, ON Canada, August 2013
  14. Kathrin J. Schmidt, Yiheng Lin, Mario Beaudoin, Guangrui Xia, Stephen K. O’Leary, Guozhen Yue, and Baojie Yan, “Correlation of material structure and solar cell device performance in hydrogenated nanocrystalline silicon solar cells”, Materials Research Society Spring Meeting 2013.
  15. Winston Chern, Pouya Hashemi, James T. Teherani, Tao Yu, Yuanwei Dong, Guangrui Xia,Dimitri A. Antoniadis, and Judy L. Hoyt, “High Mobility High-κ-All-Around Asymmetrically-Strained Germanium Nanowire Trigate p-MOSFETs”, IEEE International Electron Devices Meeting(IEDM), San Francisco, Dec. 2012.
  16. J. Zhang, K. Ghosh, L. Zhang, Yuanwei Dong, H.Y. Li, C. M. Tan, Guangrui Xia, and C. S. Tan, “TSV Scaling with Constant Liner Thickness and the Related Implications on Thermo-mechanical Stress, Capacitance, and Leakage Current,” International Conference on Solid State Devices and Materials (SSDM), Kyoto, Japan, September 25-27, 2012.
  17. K. Ghosh, J. Zhang, L. Zhang, Yuanwei Dong, H.Y. Li, C. M. Tan, Guangrui Xia, and C. S. Tan, “Strategy for TSV Scaling with Consideration on Thermo-mechanical Stress and Acceptable Delay,” International Microsystems, Packaging, Assembly Circuits Technology Conference (IMPACT), Taipei, Taiwan, October 24-26, 2012.
  18. Yuanwei Dong, and Guangrui Xia, “Modeling of SiGe Interdiffusion over the Full Germanium Content Range”, 15th Canadian Semiconductor Science and Technology Conference, Vancouver, Canada, August 2011
  19. Yiheng Lin, Wei Shi, Jizhong Li, Ting-Chang Chang, Ji-Soo Park, Jennifer Hydrick, Zigang Duan, Mark Greenberg, James Fiorenza, Lukas Chrostowski and Guangrui Xia,”Monolithic integration of AlGaAs distributed Bragg reflectors on virtual Ge substrates via aspect ratio trapping”, 5th international SiGe Technology and Device Meeting, May 2010.
  20. Tania Tasmin, Nicolas Rouger, Guangrui Xia, Lukas Chrostowski, Nicolas A.F. Jaeger,“Design of a 1550 nm SiGe/Si Quantum-Well Optical Modulator”, Photonics North Conference 2010, Niagara Falls, Ontario, Canada, 2010.
  21. B. Yang, R. Takalkar, Z. Ren, L. Black, A. Dube, J. W. Weijtmans, J. Li, J. B. Johnson, J. Faltermeier, A. Madan, Z. Zhu, A. Turansky, Guangrui Xia, A.Chakravarti, R.Pal, K.Chan, A.Reznicek, T.N.Adam, B.Yang, J.P.de Souza, E.C.T.Harley, B.Greene, A.Gehring, M.Cai, D.Aime, S.Sun, H.Meer, J.Holt, D. Theodore, S.Zollner, P.Grudowski, D.Sadana, D.-G.Park, D.Mocuta, D.Schepis, E.Maciejewski, S.Luning, J. Pellerin, and E.Leobandung, “High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor”, Technical Digest – IEEE International Electron Devices Meeting(IEDM) 2008, pp. 51.
  22. Z. Ren, G. Pei, J. Li, F. Yang, R. Takalkar, K. Chan, Guangrui Xia, Z. Zhu, A. Madan, T. Pinto, T. Adam, J. Miller, A. Dube, L. Black, J. W. Weijtmans, B. Yang, E. Harley, A. Chakravarti, T. Kanarsky, I. Lauer, D.-G. Park, and D. Sadana, “On Implementation of Embedded Phosphorus-doped SiC Stressors in SOI nMOSFETs,” Tech. Dig. — IEEE Symp. on VLSI Tech. 2008, pp. 172.
  23. Judy L Hoyt, Cait Ni Chleirigh, Leonardo Gomez, Ingvar Aberg and Guangrui Xia,“Strained Si-Ge Heterostructure Channel Materials for Bulk and Ultra-thin Body MOSFETs,” Materials Research Society Symposium Proceedings, vol. 995E, April 2007.
  24. Guangrui Xia, Michael Canonico, and Judy L. Hoyt, “Interdiffusion in SiGe/Si Epitaxial Heterostructures,” 2006 International SiGe Technology and Device Meeting,May 2006, Princeton, NJ, USA, pp. 15B.4.
  25. Dalaver Anjum, Jian Li, Guangrui Xia, Judy L. Hoyt, and Robert Hull, “Characterization of ultrathin strained-Si channel layers of n-MOSFETs using transmission electron microscopy,” Materials Research Society Symposium Proceedings, vol. 864, E3. 9.1, Spring 2005. pp. 131-6
  26. Guangrui Xia, H. M. Nayfeh, M.-J. Lee, E.A. Fitzgerald, D.A. Antoniadis, J. Li, D.H. Anjum, R. Hull, and J.L. Hoyt, “Impact of Ion Implantation Damage and Thermal Budget on Mobility Enhancement in Strained Si n-MOSFETs,” 45th Electronic Materials Conference (EMC), Salt Lake City, Utah, June 25, 2003.
  27. J. L. Hoyt, H. M. Nayfeh, S. Eguchi, I. Aberg, Guangrui Xia, T. Drake, E. A. Fitzgerald, and D. A. Antoniadis, “Strained silicon MOSFET technology,” Technical Digest-International Electron Devices Meeting 2002, pp. 23-26.

Book Chapter

Guangrui (Maggie) Xia and Yuanwei Dong, “Si-Ge interdiffusion, dopant diffusion and segregation in SiGe and SiGe: C based devices”, Chapter 2 in the book of “Micro- and Nanoelectronics: Emerging Device Challenges and Solutions” edited by Tomasz Brozek, CRC Press 2015

Print ISBN: 978-1-4822-1490-1, eBook ISBN: 978-1-4822-1491-8We.

High resolution confocal micro-Raman system in Dr. Xia’s lab (FF205)

http://www.mina.ubc.ca/lab_frank-forward-205-xia-lab

  • 325/442/633 nm polarized lasers
  • Laser penetration depth in Si: 5 nm, 0.24 μm and >2 μm respectively
  • High spectral resolution: 0.3 cm-1/pixel for 442 nm, 0.6 cm-1/pixel for 325 nm
  • Resolution after peak fitting: 0.03 cm-1 for 442 nm, 0.06 cm-1 for 325 nm
  • High spatial resolution: sub-μm laser spot size, 2D mapping capability
  • Si stress measurement resolution: 15 MPa
  • Ge concentration measurement resolution: 0.05% Ge
  • Heating stage up to 1200°C, N2 or air ambient
  • Heating rate up to 200°C/min
  • Experience with Si, SiGe, Ge nanowires, III-V, carbon nanotubes, carbon fibers, graphene, Ti oxide, uranium oxide etc.

Microsystems and Nanotechnology Group (MiNa) at UBC:

http://www.mina.ubc.ca/

UBC’s nanofabrication facility AMPEL:

http://www.ampel.ubc.ca/

 

SiGe Research at Prof. D. J. Paul’s group at Glasgow University:

http://userweb.eng.gla.ac.uk/douglas.paul/SiGe.html

TCAD and process physics research at University of Washington:

http://www.ee.washington.edu/faculty/dunham/

Si and Ge based electronic-photonic device research at MIT:

http://photonics.mit.edu/Research.html

Related materials from MIT OpenCourseWare:

6.774 Physics of Microfabrication: Front End Processing:

http://ocw.mit.edu/courses/electrical-engineering-and-computer-science/6-774-physics-of-microfabrication-front-end-processing-fall-2004/

6.720 Integrated Microelectronic Devices:

http://ocw.mit.edu/courses/electrical-engineering-and-computer-science/6-720j-integrated-microelectronic-devices-spring-2007/